Measure the depth of PN junction and carrier concentration distribution! Surface resistance measurement available as an option!
We would like to introduce our spread resistance measurement device, the 'SRP-170/2100'.
By making contact with two probes in the depth direction on a diagonally polished Si wafer, we can measure the specific resistivity profile in the depth direction of Si, the thickness of the EPI layer, the depth of the PN junction, and the carrier concentration distribution from the spread resistance value between the probes.
The "SRP2000" automates the conditioning of the probes, measurement of the bevel angle, and data input for standard samples, allowing for continuous automatic measurement of multiple samples, with a maximum of 6 samples able to be loaded simultaneously.
【Features】
■ World-standard carrier concentration distribution and profile measurement device
■ Supports measurement automation (SRP-2100)
■ Surface resistance measurement available as an option (SRP-170)
*For more details, please refer to the PDF document or feel free to contact us.
